10v drive nch mosfet ZDS020N60 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high-speed switching. 3) wide soa. ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 ZDS020N60 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 0.63 a pulsed i dp ? 2.5 a continuous i s 0.63 a pulsed i sp 2.5 a power dissipation p d 2w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 62.5 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter * *2 *1 *1 sop8 (1) (8) (5) (4) (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ?1 (8) (7) (6) (5) (1) (2) (3) (4) ? 1 body diode 1/5 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
ZDS020N60 symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.0 - 4.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 0.05 0.5 - s i d =0.5a, v ds =10v input capacitance c iss - 310 - pf v ds =10v output capacitance c oss - 145 - pf v gs =0v reverse transfer capacitance c rss - 40 - pf f=1mhz turn-on delay time t d(on) - 25 - ns i d =600ma, v dd 200v rise time t r - 20 - ns v gs =10v turn-off delay time t d(off) - 65 - ns r l =333 ? fall time t f - 65 - ns r g =50 ? total gate charge q g -1220nci d =600ma, v dd 450v gate-source charge q gs -3-ncv gs =10v gate-drain charge q gd -5-nc *pulsed z body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =1a, v gs =0v *pulsed 4.4 5.0 parameter conditions z electrical characteristics (ta = 25 ? c) conditions ? parameter static drain-source on-state resistance r ds (on) i d =0.5a, v gs =10v - * * * * * * * * * * 2/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDS020N60 ? electrical characteristic curves (ta=25 ? c) 0 0.1 0.2 0.3 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =5.0v t a =25 c pulsed v gs =10.0v v gs =6.0v v gs =8.0v v gs =4.0v 0 0.5 1 1.5 2 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =6.0v v gs =8.0v v gs =4.0v v gs =5.0v t a =25 c pulsed 0.1 1 10 100 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [ w ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.4 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 2.0 4.0 6.0 8.0 drain currnt : i d [a] gate - source voltage : v gs [v] fig.5 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source - drain voltage : v sd [v] fig.6 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDS020N60 0 2 4 6 8 10 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [ w ] gate - source voltage : v gs [v] fig.7 static drain - source on - state resistance vs. gate - source voltage i d =0.5a i d =0.3a t a =25 c pulsed 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.8 switching characteristics t d(on) t r t d(off) t f v dd P 200v v gs =10v r l =333 w t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 12 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.9 dynamic input characteristics t a =25 c v dd =450v i d =0.6a pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 10000 capacitance : c [pf] drain - source voltage : v ds [v] fig.10 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.11 maximum safe operating area t a =25 c single pulse mounted on a recommended land. (20mm 20mm 0.8mm) p w = 100 s p w = 1ms p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs = 10v) 4/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
ZDS020N60 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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